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IRF520

IRF520

IRF520

STMicroelectronics

IRF520 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

IRF520 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF5
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.27Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 100 mJ
Feedback Cap-Max (Crss) 100 pF
Turn Off Time-Max (toff) 50ns
Turn On Time-Max (ton) 115ns
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.47740 $0.9548
IRF520 Product Details

IRF520 Description


A IRF520 enhancement-mode n-channel MOSFET. Image courtesy of Linear Systems. Figure 1 shows the structure of an n-channel enhancement-mode MOSFET. Figure 1. n-channel enhancement-mode MOSFET. A p-type substrate provides physical support for the device. Two heavily doped n-type regions make the source and drain.

 

 IRF520  APPLICATIONS

HIGH CURRENT.HIGH SPEEDSWITCHING

SOLENOID AND RELAY DRIVERS REGULATORS

DC-DC &DC-ACCONVERTERS

MOTOR CONTROL.AUDIOAMPLIFIERS

AUTOMOTIVE ENVIRONMENT(INJECTION ABSAIR-BAGLAMPDRIVERS,Etc.)

 

IRF520  Features


·TYPICALRDS(on)=0.23Ω

·AVALANCHE RUGGEDTECHNOLOGY

·100% AVALANCHE TESTED

·REPETITIVE AVALANCHE DATAAT100°C LOWGATE CHARGE

·HIGH CURRENT CAPABILITY

·175°C OPERATING TEMPERATURE

 

 

  


  

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