IRF520 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
IRF520 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IRF5
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
60W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
460pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
10A
Drain-source On Resistance-Max
0.27Ohm
Pulsed Drain Current-Max (IDM)
40A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
100 mJ
Feedback Cap-Max (Crss)
100 pF
Turn Off Time-Max (toff)
50ns
Turn On Time-Max (ton)
115ns
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.47740
$0.9548
IRF520 Product Details
IRF520 Description
A IRF520 enhancement-mode n-channel MOSFET. Image courtesy of Linear Systems. Figure 1 shows the structure of an n-channel enhancement-mode MOSFET. Figure 1. n-channel enhancement-mode MOSFET. A p-type substrate provides physical support for the device. Two heavily doped n-type regions make the source and drain.