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TK62N60X,S1F

TK62N60X,S1F

TK62N60X,S1F

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 21A, 10V ±30V 6500pF @ 300V 135nC @ 10V TO-247-3

SOT-23

TK62N60X,S1F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series DTMOSIV-H
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3.1mA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 300V
Current - Continuous Drain (Id) @ 25°C 61.8A Ta
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 240 ns
Continuous Drain Current (ID) 61.8A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 247A
Avalanche Energy Rating (Eas) 698 mJ
FET Feature Super Junction
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $43.127569 $43.127569
10 $40.686386 $406.86386
100 $38.383383 $3838.3383
500 $36.210738 $18105.369
1000 $34.161074 $34161.074
TK62N60X,S1F Product Details

TK62N60X,S1F Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 698 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6500pF @ 300V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 61.8A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 240 ns.Peak drain current for this device is 247A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 90 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

TK62N60X,S1F Features


the avalanche energy rating (Eas) is 698 mJ
a continuous drain current (ID) of 61.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 240 ns
based on its rated peak drain current 247A.


TK62N60X,S1F Applications


There are a lot of Toshiba Semiconductor and Storage
TK62N60X,S1F applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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