IRF530 Description

The IRF530 is an N-channel MOSFET that is intended for high-speed and high-power applications. It can withstand 14 A of continuous current and 100 V of voltage. It can drive a load of up to 56 A in pulse mode. Other transistors in this series with somewhat different specs are available, such as IRF531, IRF532, and IRF533.

IRF530 Features

• Dynamic dv/dt rating

• Fast switching

• Ease of paralleling

• The required simple drive circuit

• Repetitive avalanche rated

• Maximum Drain-to-source voltage VDS: 100V

• Maximum continuous drain current ID: 14A

• Pulse drain current: 56A

• Maximum power dissipation: 88W

• Maximum gate-to-source voltage: ±20V

• Peak diode recovery dv/dt: 5.5V/ns

• On-state resistance: 0.16Ω

• Total gate charge Qg: 26nC

• Operating junction and storage temperature range: -55?C to +175?C

• Package: TO-220AB

• Transistor Polarity: N-channel

IRF530 Applications

• Battery management system and battery chargers

• Motor drives

• Solar power supply applications

• UPS

• DC-DC and DC-AC Converters

• Regulators

• Audio amplifier

• Solenoid and relay drivers