IRF820

new-10%

Manufacturer part number:IRF820

Manufacturer:STMicroelectronics

Description:IRF820 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:IRF820 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH VOLTAGE
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	2.5A
Base Part Number	IRF8
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	80W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	80W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Continuous Drain Current (ID)	4A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	12A
Avalanche Energy Rating (Eas)	210 mJ
Feedback Cap-Max (Crss)	50 pF
Turn Off Time-Max (toff)	245ns
Turn On Time-Max (ton)	137ns
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead