IRFP460

new-10%

Manufacturer part number:IRFP460

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 500V 18.4A TO-247

Case Package:SOT-23

Datasheet:IRFP460 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™ II
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	20A
Base Part Number	IRFP
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	220W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	220W
Turn On Delay Time	29 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2980pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18.4A Tc
Gate Charge (Qg) (Max) @ Vgs	128nC @ 10V
Rise Time	21ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Continuous Drain Current (ID)	30A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	18.4A
Drain-source On Resistance-Max	0.27Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	73.6A
Avalanche Energy Rating (Eas)	960 mJ
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead