MJB44H11T4 Overview

This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 10A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 10A volts.

MJB44H11T4 Features

the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V

MJB44H11T4 Applications

There are a lot of STMicroelectronics MJB44H11T4 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter