MJD45H11T4 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.A collector emitter saturation voltage of 1V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.This device can take an input voltage of 80V volts before it breaks down.When collector current reaches its maximum, it can reach 8A volts.
MJD45H11T4 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 40MHz
MJD45H11T4 Applications
There are a lot of STMicroelectronics MJD45H11T4 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
