MJD45H11T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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MJD45H11T4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
20W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-8A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJD45
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
-80V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
VCEsat-Max
1 V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.342743
$0.342743
10
$0.323342
$3.23342
100
$0.305040
$30.504
500
$0.287774
$143.887
1000
$0.271485
$271.485
MJD45H11T4 Product Details
MJD45H11T4 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.A collector emitter saturation voltage of 1V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.This device can take an input voltage of 80V volts before it breaks down.When collector current reaches its maximum, it can reach 8A volts.
MJD45H11T4 Features
the DC current gain for this device is 40 @ 4A 1V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 400mA, 8A the emitter base voltage is kept at 5V the current rating of this device is -8A a transition frequency of 40MHz
MJD45H11T4 Applications
There are a lot of STMicroelectronics MJD45H11T4 applications of single BJT transistors.
