MJD50T4 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.A VCE saturation (Max) of 1V @ 200mA, 1A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 10MHz is present in the part.Single BJT transistor can be broken down at a voltage of 400V volts.Collector current can be as low as 1A volts at its maximum.

MJD50T4 Features

the DC current gain for this device is 30 @ 300mA 10V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

MJD50T4 Applications

There are a lot of STMicroelectronics MJD50T4 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting