PD20010-E

new-10%

Manufacturer part number:PD20010-E

Manufacturer:STMicroelectronics

Description:Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube

Case Package:SOT-23

Datasheet:PD20010-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Package / Case	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins	3
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Additional Feature	ESD PROTECTION, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	59W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	5A
Frequency	2GHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	PD20010
Pin Count	10
JESD-30 Code	R-PDSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	59W
Case Connection	SOURCE
Current - Test	150mA
Transistor Application	AMPLIFIER
Drain to Source Voltage (Vdss)	40V
Polarity/Channel Type	N-CHANNEL
Transistor Type	LDMOS
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	15V
Gain	11dB
Max Output Power	15W
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	40V
Power - Output	10W
FET Technology	METAL-OXIDE SEMICONDUCTOR
Voltage - Test	13.6V
RoHS Status	ROHS3 Compliant