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PD55015-E

PD55015-E

PD55015-E

STMicroelectronics

STMICROELECTRONICS PD55015-E RF FET Transistor, 40 V, 5 A, 73 W, 480 MHz, 520 MHz, PowerSO-10RF

SOT-23

PD55015-E Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 25 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins 2
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 73W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Current Rating 5A
Frequency 500MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PD55015
Pin Count 10
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 73W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Max Output Power 15W
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 40V
Input Capacitance 89pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Min Breakdown Voltage 40V
Power Gain 14dB
Height 3.5mm
Length 7.5mm
Width 9.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $120.787765 $120.787765
10 $113.950722 $1139.50722
100 $107.500681 $10750.0681
500 $101.415737 $50707.8685
1000 $95.675223 $95675.223
PD55015-E Product Details
Description:

The STMicroelectronics PD55015-E RF FET Transistor is a high-performance, low-cost, high-power FET transistor designed for use in RF applications. It features a 40 V drain-source voltage, 5 A drain current, 73 W power dissipation, and a frequency range of 480 MHz to 520 MHz. The device is housed in a PowerSO-10RF package, making it suitable for use in a wide range of applications.

Features:

• High-performance, low-cost, high-power FET transistor
• 40 V drain-source voltage
• 5 A drain current
• 73 W power dissipation
• Frequency range of 480 MHz to 520 MHz
• Housed in a PowerSO-10RF package

Applications:

The STMicroelectronics PD55015-E RF FET Transistor is suitable for use in a wide range of RF applications, including:

• Wireless communication systems
• Cellular base stations
• Radio transmitters and receivers
• Automotive electronics
• Industrial control systems
• Medical electronics

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