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PD55015TR-E

PD55015TR-E

PD55015TR-E

STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

SOT-23

PD55015TR-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 25 Weeks
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 73W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Reach Compliance Code not_compliant
Current Rating 5A
Frequency 500MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PD55015
Pin Count 10
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 73W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Gain 14dB
Max Output Power 15W
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Min Breakdown Voltage 40V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $14.60040 $8760.24
PD55015TR-E Product Details
Description:

The STMicroelectronics PD55015TR-E is a N-channel RF power field-effect transistor (FET) in a PowerSOT-10RF package. It is designed for use in RF power amplifiers, switches, and other applications requiring high power and high gain.

Features:

• High power and high gain
• Low noise figure
• Low thermal resistance
• High breakdown voltage
• Low gate-source capacitance
• Low gate-drain capacitance
• Low gate-drain leakage current
• High frequency operation

Applications:

• RF power amplifiers
• RF switches
• RF power detectors
• RF power combiners
• RF power dividers
• RF power mixers
• RF power attenuators
• RF power limiters
• RF power detectors
• RF power detectors

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