PD85006-E

new-10%

Manufacturer part number:PD85006-E

Manufacturer:STMicroelectronics

Description:Trans RF MOSFET N-CH 40V 2A 3-Pin PowerSO-10RF (Formed lead) Tube

Case Package:SOT-23

Datasheet:PD85006-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Package / Case	PowerSO-10 Exposed Bottom Pad
Number of Pins	3
Packaging	Tube
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	36.5W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	250
Reach Compliance Code	not_compliant
Current Rating	2A
Frequency	870MHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	PD85006
Pin Count	10
JESD-30 Code	R-PDSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	36.5W
Case Connection	SOURCE
Current - Test	200mA
Transistor Application	AMPLIFIER
Drain to Source Voltage (Vdss)	40V
Polarity/Channel Type	N-CHANNEL
Transistor Type	LDMOS
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	15V
Gain	17dB
Max Output Power	6W
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	40V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Voltage - Test	13.6V
RoHS Status	ROHS3 Compliant