SCT20N120H

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Manufacturer part number:SCT20N120H

Manufacturer:STMicroelectronics

Description:SCT20N120H datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:SCT20N120H Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~200°C TJ
Packaging	Tape & Reel (TR)
Part Status	Active
Technology	SiCFET (Silicon Carbide)
Power Dissipation-Max	175W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	290m Ω @ 10A, 20V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 400V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 20V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	+25V, -10V

Quantity	Unit Price	Ext. Price
1	$16.43000	$16.43
500	$16.2657	$8132.85
1000	$16.1014	$16101.4
1500	$15.9371	$23905.65
2000	$15.7728	$31545.6
2500	$15.6085	$39021.25

SCT20N120H Description

This kind of silicon carbide power MOSFET is produced by using the advanced and innovative characteristics of wide band gap materials. This results in unparalleled on-resistance per unit area and very good switching performance, almost independent of temperature. The excellent thermal properties of silicon carbide materials allow designers to use industry standard profiles with significantly improved thermal properties. These characteristics make the equipment very suitable for high efficiency and high power density applications.