Description:

The STMicroelectronics SD2932B is a high-frequency, high-voltage, high-power RF transistor designed for use in RF power amplifiers. It is a MOSFET transistor with a maximum drain-source voltage of 200V and a maximum drain current of 10A. It is suitable for use in RF power amplifiers for HF, VHF, and UHF applications.

Features:
• Maximum drain-source voltage: 200V
• Maximum drain current: 10A
• Maximum power dissipation: 200W
• Operating temperature range: -55°C to +150°C
• Low gate-source capacitance
• Low gate-drain capacitance
• Low gate-source leakage current
• High breakdown voltage
• High gain
• High power output

Applications:
The STMicroelectronics SD2932B is suitable for use in RF power amplifiers for HF, VHF, and UHF applications. It is suitable for use in radio transmitters, base stations, and other RF power amplifier applications.