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3SK291(TE85L,F)

3SK291(TE85L,F)

3SK291(TE85L,F)

Toshiba Semiconductor and Storage

RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V

SOT-23

3SK291(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 52 Weeks
Package / Case SC-61AA
Surface Mount YES
Number of Pins 4
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Max Power Dissipation 150mW
Current Rating 30mA
Frequency 800MHz
Operating Temperature (Max) 125°C
Configuration Single
Current - Test 10mA
Drain to Source Voltage (Vdss) 12.5V
Transistor Type N-Channel Dual Gate
Continuous Drain Current (ID) 30mA
Gain 22.5dB
Drain Current-Max (Abs) (ID) 0.03A
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 2.5dB
Voltage - Test 6V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.026400 $10.0264
10 $9.458868 $94.58868
100 $8.923460 $892.346
500 $8.418359 $4209.1795
1000 $7.941848 $7941.848

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