Description:

The STMicroelectronics SD2932BW is a high-frequency, high-voltage, high-power RF transistor. It is designed for use in RF power amplifiers, oscillators, and other RF applications. It is a MOSFET type transistor with a maximum drain-source voltage of 30V and a maximum drain current of 8A.

Features:
• High-frequency, high-voltage, high-power RF transistor
• Maximum drain-source voltage of 30V
• Maximum drain current of 8A
• Low gate-source capacitance
• Low gate-drain capacitance
• Low gate-source leakage current
• Low gate-drain leakage current
• Low thermal resistance
• High power gain
• High frequency operation

Applications:
The STMicroelectronics SD2932BW is suitable for use in RF power amplifiers, oscillators, and other RF applications. It is suitable for use in high-power, high-frequency applications such as cellular base stations, satellite communications, and other wireless communication systems. It is also suitable for use in automotive, industrial, and consumer electronics applications.