STB200NF04L

new-10%

Manufacturer part number:STB200NF04L

Manufacturer:STMicroelectronics

Description:MOSFET N Ch 40V 3mOhm 120A

Case Package:SOT-23

Datasheet:STB200NF04L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	3.5MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	120A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB200N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	37 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 4.5V
Rise Time	270ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	480A
Dual Supply Voltage	40V
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free