SI1011X-T1-GE3

new-10%

Manufacturer part number:SI1011X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V SC-89

Case Package:SOT-23

Datasheet:SI1011X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	190mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	640m Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	62pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Continuous Drain Current (ID)	480mA
Gate to Source Voltage (Vgs)	5V
Drain-source On Resistance-Max	0.64Ohm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free