STB22NS25ZT4

new-10%

Manufacturer part number:STB22NS25ZT4

Manufacturer:STMicroelectronics

Description:MOSFET N-Ch 250 Volt 22 Amp

Case Package:SOT-23

Datasheet:STB22NS25ZT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	MESH OVERLAY™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	250V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	22A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB22N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	135W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	135W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	151nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	78 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.15Ohm
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	88A
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free