STB23NM60ND

new-10%

Manufacturer part number:STB23NM60ND

Manufacturer:STMicroelectronics

Description:STB23NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB23NM60ND Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	FDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Base Part Number	STB23N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 50V
Current - Continuous Drain (Id) @ 25°C	19.5A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	78A
Avalanche Energy Rating (Eas)	700 mJ
Height	4.6mm
Length	10.75mm
Width	10.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free