STB6NM60N

new-10%

Manufacturer part number:STB6NM60N

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 4.6A D2PAK

Case Package:SOT-23

Datasheet:STB6NM60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Resistance	920mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCHE ENERGY RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STB6N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	920m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 50V
Current - Continuous Drain (Id) @ 25°C	4.6A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	4.6A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	18.4A
Avalanche Energy Rating (Eas)	65 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free