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STB34N65M5

STB34N65M5

STB34N65M5

STMicroelectronics

MOSFET N-CH 650V 28A D2PAK

SOT-23

STB34N65M5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 110MOhm
Terminal Finish Matte Tin (Sn) - annealed
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STB34N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Turn On Delay Time 59 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $2.71810 $2.7181

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