DMP3056L-7

new-10%

Manufacturer part number:DMP3056L-7

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 30V 4.3A SOT23

Case Package:SOT-23

Datasheet:DMP3056L-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.38W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.38W
Turn On Delay Time	4.9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	642pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.3A Ta
Gate Charge (Qg) (Max) @ Vgs	11.8nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Turn-Off Delay Time	35.2 ns
Continuous Drain Current (ID)	-4.3A
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.05Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	20A
Max Junction Temperature (Tj)	150°C
Height	1.1mm
RoHS Status	ROHS3 Compliant