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STB40NS15T4

STB40NS15T4

STB40NS15T4

STMicroelectronics

STB40NS15T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STB40NS15T4 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Series MESH OVERLAY™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 45mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 40A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STB40N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 3 V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.60160 $1.6016
STB40NS15T4 Product Details

STB40NS15T4 Description


STB40NS15T4 belongs to the family of N-channel MESH OVERLAY? power MOSFETs provided by STMicroelectronics based on its consolidated strip layout-based MESH OVERLAY? process. The resulting STB40NS15T4 is able to deliver low gate charge, exceptional dv/dt capability, and extremely low intrinsic capacitances.



STB40NS15T4 Features


  • Low gate charge

  • MESH OVERLAY? process

  • Exceptional dv/dt capability

  • Extremely low intrinsic capacitances

  • Supplied in the D2PAK package



STB40NS15T4 Applications


  • Switching application


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