STB50NE10T4

new-10%

Manufacturer part number:STB50NE10T4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 100V 50A D2PAK

Case Package:SOT-23

Datasheet:STB50NE10T4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	50A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STB50N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	180W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	180W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	166nC @ 10V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.027Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	300 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free