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IRFM210BTF_FP001

IRFM210BTF_FP001

IRFM210BTF_FP001

ON Semiconductor

MOSFET N-CH 200V 0.77A SOT-223

SOT-23

IRFM210BTF_FP001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 390mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 25V
Current - Continuous Drain (Id) @ 25°C 770mA Tc
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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