STB75NF20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB75NF20 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
34mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STB75N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Turn On Delay Time
53 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
34m Ω @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3260pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
29 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
37A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
200V
Avalanche Energy Rating (Eas)
205 mJ
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STB75NF20 Product Details
STB75NF20 Description
The STB75NF20 MOSFET family, which uses STMicroelectronics' unique STripFETTM process, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the primary switch in sophisticated isolated DC-DC converters with great efficiency.