IPI50R399CPXKSA2

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Manufacturer part number:IPI50R399CPXKSA2

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 500V 9A 3-Pin TO-262 Tube

Case Package:SOT-23

Datasheet:IPI50R399CPXKSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	399m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 330μA
Input Capacitance (Ciss) (Max) @ Vds	890pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	500V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	560V
Pulsed Drain Current-Max (IDM)	20A
Avalanche Energy Rating (Eas)	215 mJ
Height	9.45mm
Length	10.2mm
Width	4.5mm
RoHS Status	ROHS3 Compliant