STBV42G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STBV42G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STBV42
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 400mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 750mA
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STBV42G Product Details
STBV42G Overview
DC current gain in this device equals 10 @ 400mA 5V, which is the ratio of the base current to the collector current.When VCE saturation is 1.5V @ 250mA, 750mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.A maximum collector current of 1A volts is possible.
STBV42G Features
the DC current gain for this device is 10 @ 400mA 5V the vce saturation(Max) is 1.5V @ 250mA, 750mA the emitter base voltage is kept at 9V
STBV42G Applications
There are a lot of STMicroelectronics STBV42G applications of single BJT transistors.