PH3230S,115

new-10%

Manufacturer part number:PH3230S,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 30V 100A LFPAK

Case Package:SOT-23

Datasheet:PH3230S,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2009
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G4
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 10V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 5V
Drain to Source Voltage (Vdss)	30V
Continuous Drain Current (ID)	100A
JEDEC-95 Code	MO-235AA
Drain Current-Max (Abs) (ID)	107A
Drain-source On Resistance-Max	0.0065Ohm
Pulsed Drain Current-Max (IDM)	428A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	2.5 mJ
Power Dissipation-Max (Abs)	62.5W
RoHS Status	RoHS Compliant