STD2NM60T4

new-10%

Manufacturer part number:STD2NM60T4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 2A DPAK

Case Package:SOT-23

Datasheet:STD2NM60T4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Current Rating	2A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD2N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	46W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	46W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	8A
Avalanche Energy Rating (Eas)	250 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free