Name: STH15NB50FI
Brand: STMicroelectronics
SKU: STH15NB50FI
Availability: InStock

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STH15NB50FI

Manufacturer part number:STH15NB50FI

Manufacturer:STMicroelectronics

Description:STH15NB50FI datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STH15NB50FI Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOWATT-218-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STH15N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	80W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10.5A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	10.5A
Drain-source On Resistance-Max	0.36Ohm
Pulsed Drain Current-Max (IDM)	58.4A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	850 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

STH15NB50FI Product Details

STH15NB50FI Description

The STMicroelectronics STH15NB50FI uses the latest high voltage MESH OVERLAY^TM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent-pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STH15NB50FI Features

Typical R_DS(ON)=0.33 Ω
Extremely high dv/dt capability
± 30V Gate to the source voltage rating
100% avalanche tested
Gate charge minimized

STH15NB50FI Applications

High current, high-speed switching
Switch-mode power supplies (SMPS)
DC-AC converters for welding equipment and uninterruptible power supplies and motor drive