STD3PK50Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD3PK50Z Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
DPAK-0068772_A
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
3Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD3N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
85W
Turn On Delay Time
16 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
620pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.8A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
2.8A
Threshold Voltage
-3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
3.75 V
Height
2.63mm
Length
6.6mm
Width
2.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STD3PK50Z Product Details
Description
The STD3PK50Z is a P-channel 500 V, 3 |? typ., 2.8 A Zener-protected SuperMESH? Power MOSFET in a DPAK package. Through the improvement of ST's well-known strip-based PowerMESH? layout, STMicroelectronics' SuperMESH? technology was used to create this P-channel Zener-protected Power MOSFET. This device is made to offer a high degree of dv/dt capability for the most demanding applications in addition to a notable reduction in on-resistance.