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STD3PK50Z

STD3PK50Z

STD3PK50Z

STMicroelectronics

STD3PK50Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STD3PK50Z Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier DPAK-0068772_A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STD3N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 2.8A
Threshold Voltage -3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 3.75 V
Height 2.63mm
Length 6.6mm
Width 2.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
STD3PK50Z Product Details

Description


The STD3PK50Z is a P-channel 500 V, 3 |? typ., 2.8 A Zener-protected SuperMESH? Power MOSFET in a DPAK package. Through the improvement of ST's well-known strip-based PowerMESH? layout, STMicroelectronics' SuperMESH? technology was used to create this P-channel Zener-protected Power MOSFET. This device is made to offer a high degree of dv/dt capability for the most demanding applications in addition to a notable reduction in on-resistance.



Features


  • 100% avalanche tested

  • Very low intrinsic capacitance

  • Improved ESD capability

  • Gate charge minimized

  • Extremely high dv/dt capability



Applications


  • Switching applications

  • Small motor control

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


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