STD70N02L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD70N02L Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ III
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
8mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
24V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
60A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD70N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
60W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 16V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Rise Time
130ns
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
60A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
24V
Pulsed Drain Current-Max (IDM)
240A
Avalanche Energy Rating (Eas)
280 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3026 items
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STD70N02L Product Details
STD70N02L Description
STD70N02L is a 25v N-channel STripFET? III Power MOSFET. The STD70N02L utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STD70N02L is in the TO-252-3 package with 60W power dissipation.
STD70N02L Features
RDS(ON) * Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
STD70N02L Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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