SQ3427EEV-T1-GE3 Description

The SQ3427EEV-T1-GE3 is an Automotive P-Channel 60 V (D-S) 175 °C MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.

SQ3427EEV-T1-GE3 Features

• 100 % Rg and UIS Tested

• Typical ESD Protection 800 V

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET® Power MOSFET

• AEC-Q101 Qualified

SQ3427EEV-T1-GE3 Applications

• Switch mode power supplies

• Variable-frequency drives

• Power electronics applications

• Modern electric vehicles

• As switching devices