SQ3427EEV-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website
SOT-23
SQ3427EEV-T1-GE3 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
19.986414mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Digi-Reel®
Published
2013
Series
TrenchFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
5W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
5W
Turn On Delay Time
10 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
82m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1125pF @ 30V
Current - Continuous Drain (Id) @ 25°C
5.5A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Rise Time
7ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
-1.5V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.082Ohm
Feedback Cap-Max (Crss)
85 pF
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SQ3427EEV-T1-GE3 Product Details
SQ3427EEV-T1-GE3 Description
The SQ3427EEV-T1-GE3 is an Automotive P-Channel 60 V (D-S) 175 °C MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.
SQ3427EEV-T1-GE3 Features
100 % Rg and UIS Tested
Typical ESD Protection 800 V
Compliant to RoHS Directive 2002/95/EC
Halogen-free According to IEC 61249-2-21 Definition