Name: STE250NS10
Brand: STMicroelectronics
SKU: STE250NS10
Availability: InStock

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STE250NS10

Manufacturer part number:STE250NS10

Manufacturer:STMicroelectronics

Description:STE250NS10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STE250NS10 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	STripFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	5.5mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	220A
Base Part Number	STE250
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	ISOLATED
Turn On Delay Time	110 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.5m Ω @ 125A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	31000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	220A Tc
Gate Charge (Qg) (Max) @ Vgs	900nC @ 10V
Rise Time	380ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	300 ns
Turn-Off Delay Time	1.1 μs
Continuous Drain Current (ID)	220A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	880A
Avalanche Energy Rating (Eas)	800 mJ
Height	9.1mm
Length	38.2mm
Width	25.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STE250NS10 Product Details

STE250NS10 Description

The STE250NS10 is a 100V N-channel STripFET? Power MOSFET latest development of STMicroelectronics's unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.