STE250NS10

new-10%

Manufacturer part number:STE250NS10

Manufacturer:STMicroelectronics

Description:STE250NS10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STE250NS10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	STripFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	5.5mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	220A
Base Part Number	STE250
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	ISOLATED
Turn On Delay Time	110 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.5m Ω @ 125A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	31000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	220A Tc
Gate Charge (Qg) (Max) @ Vgs	900nC @ 10V
Rise Time	380ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	300 ns
Turn-Off Delay Time	1.1 μs
Continuous Drain Current (ID)	220A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	880A
Avalanche Energy Rating (Eas)	800 mJ
Height	9.1mm
Length	38.2mm
Width	25.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free