SI5855DC-T1-E3

new-10%

Manufacturer part number:SI5855DC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2.7A 1206-8

Case Package:SOT-23

Datasheet:SI5855DC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	110mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	16 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 2.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	2.7A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	-450 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free