STF30NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STF30NM60ND Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF30N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
40W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
40W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
130m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
25A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
75 ns
Turn-Off Delay Time
110 ns
Continuous Drain Current (ID)
25A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.385Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
100A
Avalanche Energy Rating (Eas)
900 mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$6.62756
$6.62756
STF30NM60ND Product Details
STF30NM60ND Description
STF30NM60ND belongs to the family of N-channel FDmesh? II power MOSFETs with intrinsic fast-recovery body diode. It is manufactured by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for switching applications.