STF826 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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STF826 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Terminal Position
DUAL
Terminal Form
FLAT
Frequency
100MHz
Base Part Number
STF826
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.1V @ 150mA, 3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
1.1V
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.286383
$0.286383
10
$0.270173
$2.70173
100
$0.254880
$25.488
500
$0.240453
$120.2265
1000
$0.226842
$226.842
STF826 Product Details
STF826 Overview
DC current gain in this device equals 100 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.100MHz is present in the transition frequency.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
STF826 Features
the DC current gain for this device is 100 @ 100mA 2V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 1.1V @ 150mA, 3A the emitter base voltage is kept at 5V a transition frequency of 100MHz
STF826 Applications
There are a lot of STMicroelectronics STF826 applications of single BJT transistors.