NTD60N02RT4

new-10%

Manufacturer part number:NTD60N02RT4

Manufacturer:ON Semiconductor

Description:MOSFET 25V 62A N-Channel

Case Package:SOT-23

Datasheet:NTD60N02RT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e0
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn80Pb20)
Subcategory	FET General Purpose Power
Voltage - Rated DC	24V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	60A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.25W Ta 58W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.87W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C	8.5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Rise Time	33ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0105Ohm
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	60 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free