STFV4N150 Description

STFV4N150 is a 1500v N-channel very high voltage PowerMESH? MOSFET. Using the well-consolidated high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure gives the lowest RDS(on) per area, unrivaled gate charge, and switching characteristics. The creepage path is what makes this package unique from TO-220FP.

The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package meet all stringent safety norms in high voltage applications.

STFV4N150 Features

• Typical RDS(on)=5|?

• Avalanche ruggedness

• Gate charge minimized

• Very low intrinsic capacitances

• High-speed switching

• The fully plastic TO-220 package

• The creepage distance path is>4mm

STFV4N150 Applications

• Computers

• Electric Vehicles

• Welding

• Aircraft

• Automation

• Medical