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STGDL6NC60DT4

STGDL6NC60DT4

STGDL6NC60DT4

STMicroelectronics

STGDL6NC60DT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGDL6NC60DT4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 50W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGDL6
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 50W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 13A
Reverse Recovery Time 30 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 10.5 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Turn Off Time-Nom (toff) 122 ns
Gate Charge 12nC
Current - Collector Pulsed (Icm) 25A
Td (on/off) @ 25°C 6.7ns/46ns
Switching Energy 46.5μJ (on), 23.5μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.580000 $1.58
10 $1.490566 $14.90566
100 $1.406194 $140.6194
500 $1.326598 $663.299
1000 $1.251508 $1251.508
STGDL6NC60DT4 Product Details

STGDL6NC60DT4 Description


STGDL6NC60DT4 is a 600v hyperfast IGBT. The transistor STGDL6NC60DT4 can be applied in very high-frequency operation, high-frequency lamp ballast, and SMPS and PFC(including hard switching) applications. This series of hyper-fast IGBT is based on PowerMESH technology and exhibits very low turn-off energy, thanks to a new lifetime control system. This results in an optimized trade-off between on-state voltage and switching losses, allowing very high operating frequencies.



STGDL6NC60DT4 Features


Low CREs/ CIEs ratio (no cross-conduction susceptibility)

Very soft ultra-fast recovery antiparallel diode

Collector current (continuous) at TC = 25 °C: 14A

Turn-off latching current: 18A

Total dissipation at TC = 25 °C: 58W

Operating junction temperature: – 55 to 150 °C



STGDL6NC60DT4 Applications


Very high-frequency operation

High-frequency lamp ballast

SMPS and PFC (including hard switching)

Automotive 

Infotainment & cluster 

Communications equipment 

Broadband fixed line access 

Industrial 


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