STGF20V60DF Description

This STGF20V60DF is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT STGF20V60DF offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. 

STGF20V60DF Features

High-speed switching

Tight parameters distribution

Safe paralleling

Low thermal resistance

Short-circuit rated

Ultrafast soft recovery antiparallel diode

STGF20V60DF Applications

Automotive 

Hybrid, electric & powertrain systems 

Industrial 

Building automation 

Enterprise systems 

Enterprise machine