STGW15H120F2 Description

STGW15H120F2 IGBTs was created employing a cutting-edge, exclusive trench gate field-stop construction. These components are a part of the upgraded H series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing high frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.

STGW15H120F2 Features

• Safe paralleling

• Minimized tail current

• Low thermal resistance

• High speed switching series

• VCE(sat) = 2.1 V (typ.) @ IC = 15 A

• Maximum junction temperature: TJ = 175 °C

• 5 μs minimum short-circuit withstand time at TJ=150 °C

STGW15H120F2 Applications

• Welding machines

• Photovoltaic inverters

• Power factor correction

• High frequency converters

• Uninterruptible power supply