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IGW50N65H5AXKSA1

IGW50N65H5AXKSA1

IGW50N65H5AXKSA1

Infineon Technologies

IGW50N65H5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGW50N65H5AXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2015
Series Automotive, AEC-Q101, TrenchStop™
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 270W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 270W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 650V
Turn On Time 33 ns
Test Condition 400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 213 ns
IGBT Type Trench
Gate Charge 116nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 21ns/173ns
Switching Energy 450μJ (on), 160μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
240 $4.83117 $1159.4808
IGW50N65H5AXKSA1 Product Details

IGW50N65H5AXKSA1 Description


5 FAST IGBT with high speed in TRENCHSTOPTM 5 technology



IGW50N65H5AXKSA1 Features


  • Replacement of older generation IGBTs with plug-and-play devices

  • Breakdown voltage of 650V

  • Quadratic gate charge

  • 175°C is the maximum junction temperature



IGW50N65H5AXKSA1 Applications


?Power adapter


?Converter DC/DC


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