STGW40H60DLFB Description

STGW40H60DLFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGW40H60DLFB Features

Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Low VF soft recovery co-packaged diode
Lead free package
STGW40H60DLFB Applications

Induction heating
Microwave oven
Resonant converters
New energy vehicles,
photovoltaic & wind power generation
smart grid