STGWA15H120F2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWA15H120F2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
259W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGWA15
Input Type
Standard
Power - Max
259W
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
30A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 15A
IGBT Type
Trench Field Stop
Gate Charge
67nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
23ns/111ns
Switching Energy
380μJ (on), 370μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$5.01630
$3009.78
STGWA15H120F2 Product Details
STGWA15H120F2 Description
STGWA15H120F2 is a member of the H series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution. It is supplied in the TO-247 package to save board space.
STGWA15H120F2 Features
Low conduction and switching losses
A slightly positive VCE(sat) temperature coefficient