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STGWA40M120DF3

  • STGWA40M120DF3
  • STGWA40M120DF3

STGWA40M120DF3

STGWA40M120DF3

STMicroelectronics

STGWA40M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWA40M120DF3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 468W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWA40
Element Configuration Single
Input Type Standard
Power - Max 468W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Reverse Recovery Time 355 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.85V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 125nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 35ns/140ns
Switching Energy 1.03mJ (on), 480μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.587440 $14.58744
10 $13.761736 $137.61736
100 $12.982770 $1298.277
500 $12.247896 $6123.948
1000 $11.554619 $11554.619
STGWA40M120DF3 Product Details

STGWA40M120DF3 Description


The STGWA40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The STGWA40M120DF3 is part of the M family of IGBTs, which provide the best performance tradeoff for inverter systems where low-loss and short-circuit capability are critical. A positive VCE(sat) temperature coefficient and a narrow parameter distribution also result in a safer paralleling operation.



STGWA40M120DF3 Features


  • Tight parameters distribution

  • Safer paralleling

  • Low thermal resistance

  • Soft and fast recovery anti-parallel diode

  • 10μs Short-circuit withstand time



STGWA40M120DF3 Applications


  • Industrial drives

  • UPS

  • Solar

  • Welding

  • turning shafts 


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