IKP40N65H5XKSA1

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Manufacturer part number:IKP40N65H5XKSA1

Manufacturer:Infineon Technologies

Description:IKP40N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKP40N65H5XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2008
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	255W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Input Type	Standard
Power - Max	255W
Halogen Free	Halogen Free
Collector Emitter Voltage (VCEO)	1.65V
Max Collector Current	74A
Reverse Recovery Time	62 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.65V
Test Condition	400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Gate Charge	95nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	22ns/165ns
Switching Energy	390μJ (on), 120μJ (off)
Height	15.95mm
Length	10.36mm
Width	4.57mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$3.78000	$3.78
10	$3.39200	$33.92
100	$2.77890	$277.89
500	$2.36560	$1182.8
1,000	$1.99508	$1.99508

Description

The IKP40N65H5XKSA1 is a High speed 5 IGBT in TRENCHSTOP^TM 5 technology co-packed with RAPID 1 fast and soft antiparallel diode. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Features

? Low gate charge QG

? IGBT co-packed with RAPID 1 fast and soft antiparallel diode

? Maximum junction temperature 175°C

? Qualified according to JEDEC for target applications

? Pb-free lead plating; RoHS-compliant

? High-speed H5 technology offering

? Best-in-Class efficiency in hard switching and resonant topologies

? Plug and play replacement of previous generation IGBTs

? 650V breakdown voltage

Applications

? Solar converters

? Uninterruptible power supplies

? Circuit