STGWT20H60DF  Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.

STGWT20H60DF Features

Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.8 V (Typ.) @ IC = 20 A

Tight parameter distribution

Safe paralleling

Low thermal resistance

STGWT20H60DF  Applications

Photovoltaic inweters

Unteruplble power supply

Welding

Pover facor corredion

Very high frequency converters